Power GaN has lagged RF GaN because of the time required to implement cost-reduction strategies used by multiple suppliers. Most notably is the move to 6-inch silicon substrates and lower cost plastic ...
The collaboration outlined in the MoU brings together Onsemi’s experience in integrated systems and packaging with Innoscience’s GaN technology and high-volume manufacturing to enable delivery of cost ...
GaN-based LEDs and power electronics are currently a very active area for research, development, and production. While accurate and reproducible substrate temperature measurement is imperative for ...
Efficient Power Conversion (EPC) provides a forum for engineers to receive product support, ask questions, and share ideas on using GaN technology. EL SEGUNDO, Calif.--(BUSINESS WIRE)--EPC announces ...
The Q3 2025 patent landscape confirms GaN’s accelerating industrial expansion. During the quarter, 599 new patent families ...
In recent days, ON Semiconductor reported stronger-than-expected third-quarter 2025 results, announced a US$6.00 billion share buyback program starting in 2026, and disclosed a new collaboration with ...
Innoscience said at midday on December 3 via the Hong Kong Stock Exchange that it had prevailed in its US patent dispute with ...
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