The interface at which p-type silicon and n-type silicon make contact with each other. At this coupling point, free electrons (n-type) and holes (p-type) cancel each other and form a "depletion zone" ...

For the standard junction diode, there are two operating regions and three possible biasing conditions. There is no external potential energy applied to the P-N junction when a diode is connected in a ...

Last week we covered diodes, specifically thermionic and PN junction diodes. But oh, there are more; and they’re special! One of the the most commonly used ‘specialty’ diode would have to be the metal ...

What is a P-N Junction? A p-n junction is a fundamental building block of modern electronics, formed by joining together two types of semiconductor materials: p-type (positive) and n-type (negative).

In the past few years, the research effort on 2D materials has rapidly increased, driven by the great variety of layered materials and their exceptional properties when reduced to a few atomic layers ...

Si LSI manufacturing technology is essential as the foundation of modern society. However, there was no wafer-scale technology for rapid, non-destructive, and non-contact evaluation of the internal ...

Details about avalanche and flyback-type converters. MOSFETs and linear mode. In Part 1, we discussed the body diode, which is a PN junction diode that lies inside of the MOSFET, between the n- region ...

In conventional organic solar cells, the electrons exhibit their particle-nature and need to jump between organic molecules in the cell. The conductivity is, therefore, lower than that of crystalline ...

Although they are a simple device, diodes do have a number of traits to consider. These traits are often application dependent. Some applications include: rectifiers, signal ORing, transistor turn off ...

Technological advances in the electronics industry have resulted in our digital cameras, computers, and cell phones drastically reducing in size. In order to maintain this momentum, there is a strong ...

a, Schematic illustration of the buried channel transistor structure. b, THz emission from the PN junction. Ultrafast photocarrier transport due to the built-in electric field (drift current) ...